R1WV6416RBG-5SI#B0
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produsen:
RENESAS
Deskripsi:
R1WV6416RBG-5SI - Low Power SRAM
Kategori:
Penyimpanan
Spesifikasi
Kategori:
Sirkuit terintegrasi (IC)
Memori
Memori
Status Produk:
Usang
Tipe pemasangan:
Permukaan Gunung
Paket:
Besi
Seri:
-
Antarmuka Memori:
Paralel
Tulis Waktu Siklus - Kata, Halaman:
55ns
Paket Perangkat Pemasok:
48-TFBGA (8.5x11)
Tipe Memori:
Lincah
Mfr:
RENESAS
Ukuran memori:
64Mbit
Tegangan - Pasokan:
2.7V ~ 3.6V
Paket / Kasus:
48-TFBGA
Organisasi Memori:
4M x 16, 8M x 8
Suhu operasi:
-40°C ~ 85°C (TA)
teknologi:
SRAM - Asinkron
Waktu akses:
55 detik
Format memori:
SRAM
Pengantar
SRAM - IC Memori Asinkron 64Mbit Paralel 55 ns 48-TFBGA (8.5x11)
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
HN58C256AP10E |
HN58C256 - PARALLEL 256KBIT EEPR
|
|
|
|
UPD48576236F1-E18-DW1-A |
IC DRAM 576MBIT HSTL 144TFBGA
|
|
|
|
UPD48576209F1-E24-DW1-E2-A |
IC DRAM 576MBIT HSTL 144TFBGA
|
|
|
|
R1LV0108ESA-5SI#B1 |
R1LV0108E - 1Mb Advanced LPSRAM
|
|
|
|
R1LV1616HSA-5SI#B1 |
R1LV1616HSA - Wide Temperature R
|
|
|
|
HN58C257AT85E |
HN58C257 - PARALLEL 256KBIT EEPR
|
|
|
|
M5M5V108DVP-70H#BT |
STANDARD SRAM, 128KX8, 70NS, CMO
|
|
|
|
HN58V66ATI10E |
HN58V66 - PARALLEL 64KBIT EEPROM
|
|
|
|
R1LP5256ESA-5SI#S1 |
R1LP5256 - 256Kb Advanced LPSRAM
|
|
|
|
R1RW0416DSB-2PI#D1 |
R1RW0416D-I - Wide Temperature R
|
Kirim RFQ
Stok:
MOQ: