W97AH6NBVA1E TR
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produsen:
Elektronik Winbond
Deskripsi:
IC DRAM 1GBIT HSUL 12 134VFBGA
Kategori:
Penyimpanan
Spesifikasi
Kategori:
Sirkuit terintegrasi (IC)
Memori
Memori
Ukuran memori:
1Gbit
Status Produk:
Aktif
Tipe pemasangan:
Permukaan Gunung
Paket:
Tape & Reel (TR)
Seri:
-
DigiKey Dapat Diprogram:
Tidak diverifikasi
Antarmuka Memori:
HSUL_12
Tulis Waktu Siklus - Kata, Halaman:
15ns
Paket Perangkat Pemasok:
134-VFBGA (10x11.5)
Tipe Memori:
Lincah
Mfr:
Elektronik Winbond
Frekuensi Jam:
533 MHz
Tegangan - Pasokan:
1.14V ~ 1.3V, 1.7V ~ 1.95V
Paket / Kasus:
134-VFBGA
Organisasi Memori:
64Mx16
Suhu operasi:
-40°C ~ 85°C (TC)
teknologi:
SDRAM - Mobile LPDDR2-S4B
Nomor produk dasar:
W97AH6
Format memori:
DRAM
Pengantar
SDRAM - Mobile LPDDR2-S4B Memori IC 1Gbit HSUL_12 533 MHz 134-VFBGA (10x11.5)
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
W29N02KVBIAE TR |
IC FLASH 2GBIT ONFI 63VFBGA
|
|
|
|
W979H2KBVX1I TR |
IC DRAM 512MBIT HSUL 12 134VFBGA
|
|
|
|
W25N01GWZEIG TR |
IC FLASH 1GBIT SPI/QUAD 8WSON
|
|
|
|
W9812G6KH-5I TR |
IC DRAM 128MBIT LVTTL 54TSOP II
|
|
|
|
W632GG8NB-11 TR |
IC DRAM 2GBIT SSTL 15 78VFBGA
|
|
|
|
W979H6KBVX1E TR |
IC DRAM 512MBIT HSUL 12 134VFBGA
|
|
|
|
W971GG8NB25I TR |
IC DRAM 1GBIT SSTL 18 60VFBGA
|
|
|
|
W9812G6KH-5I |
IC DRAM 128MBIT LVTTL 54TSOP II
|
|
|
|
W25N512GVEIG |
IC FLASH 512MBIT SPI/QUAD 8WSON
|
|
|
|
W979H6KBVX2I TR |
IC DRAM 512MBIT PAR 134VFBGA
|
|
|
|
W94AD2KBJX5E |
IC DRAM 1GBIT PARALLEL 90VFBGA
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|
|
|
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IC DRAM 1GBIT SSTL 15 96VFBGA
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|
|
|
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IC FLASH 512MBIT SPI 8WSON
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|
|
|
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|
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|
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|
W25Q80DVSNIG |
IC FLASH 8MBIT SPI/QUAD 8SOIC
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|
|
|
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IC FLASH 1GBIT SPI/QUAD 16SOIC
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|
|
|
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|
|
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W25R128JWEIQ TR |
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Kirim RFQ
Stok:
MOQ: