W66CQ2NQUAHJ TR
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produsen:
Elektronik Winbond
Deskripsi:
IC DRAM 4GBIT LVSTL 11 200WFBGA
Kategori:
Penyimpanan
Spesifikasi
Kategori:
Sirkuit terintegrasi (IC)
Memori
Memori
Ukuran memori:
4Gbit
Status Produk:
Aktif
Tipe pemasangan:
Permukaan Gunung
Paket:
Tape & Reel (TR)
Seri:
-
DigiKey Dapat Diprogram:
Tidak diverifikasi
Antarmuka Memori:
LVSTL_11
Tulis Waktu Siklus - Kata, Halaman:
18ns
Paket Perangkat Pemasok:
200-WFBGA (10x14,5)
Tipe Memori:
Lincah
Mfr:
Elektronik Winbond
Frekuensi Jam:
2,133 GHz
Tegangan - Pasokan:
1.06V ~ 1.17V, 1.7V ~ 1.95V
Waktu akses:
3,5 detik
Paket / Kasus:
200-WFBGA
Organisasi Memori:
128Mx32
Suhu operasi:
-40°C ~ 105°C (TC)
teknologi:
SDRAM - Seluler LPDDR4X
Nomor produk dasar:
W66CQ2
Format memori:
DRAM
Pengantar
SDRAM - Mobile LPDDR4X Memory IC 4Gbit LVSTL_11 2.133 GHz 3,5 ns 200-WFBGA (10x14.5)
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| Gambar | Bagian # | Deskripsi | |
|---|---|---|---|
|
|
W29N02KVBIAE TR |
IC FLASH 2GBIT ONFI 63VFBGA
|
|
|
|
W97AH6NBVA1E TR |
IC DRAM 1GBIT HSUL 12 134VFBGA
|
|
|
|
W979H2KBVX1I TR |
IC DRAM 512MBIT HSUL 12 134VFBGA
|
|
|
|
W25N01GWZEIG TR |
IC FLASH 1GBIT SPI/QUAD 8WSON
|
|
|
|
W9812G6KH-5I TR |
IC DRAM 128MBIT LVTTL 54TSOP II
|
|
|
|
W632GG8NB-11 TR |
IC DRAM 2GBIT SSTL 15 78VFBGA
|
|
|
|
W979H6KBVX1E TR |
IC DRAM 512MBIT HSUL 12 134VFBGA
|
|
|
|
W971GG8NB25I TR |
IC DRAM 1GBIT SSTL 18 60VFBGA
|
|
|
|
W9812G6KH-5I |
IC DRAM 128MBIT LVTTL 54TSOP II
|
|
|
|
W25N512GVEIG |
IC FLASH 512MBIT SPI/QUAD 8WSON
|
|
|
|
W979H6KBVX2I TR |
IC DRAM 512MBIT PAR 134VFBGA
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|
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|
W94AD2KBJX5E |
IC DRAM 1GBIT PARALLEL 90VFBGA
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|
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IC FLASH 512MBIT SPI 8WSON
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|
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IC DRAM 2GBIT PAR 96VFBGA
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|
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IC FLASH 1GBIT ONFI 48TSOP
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|
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IC FLASH 8MBIT SPI/QUAD 8SOIC
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|
|
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W25Q01NWSFIQ TR |
IC FLASH 1GBIT SPI/QUAD 16SOIC
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W25N01GVTBIG |
IC FLASH 1GBIT SPI/QUAD 24TFBGA
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IC FLASH 2GBIT SPI/QUAD 8WSON
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IC DRAM 128MBIT PAR 66TSOP II
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Kirim RFQ
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